参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current300 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Rds On - Drain-Source Resistance2 Ohms
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CAHTS8541290000
Minimum Operating Temperature- 65 C
CNHTS8541290000
PackagingCut Tape
PackagingReel
PackagingMouseReel
TARIC8541290000
Unit Weight0.000176 oz
Pd - Power Dissipation200 mW
BrandDiodes Incorporated
Product TypeMOSFET
Factory Pack Quantity10000
SubcategoryMOSFETs
ManufacturerDiodes Incorporated
Product CategoryMOSFET
Number of Channels1 Channel
USHTS8541290095
DescriptionMOSFET 2N7002 Family