参数项参数值
参数项参数值
ConfigurationSingle
Transistor PolarityN-Channel
Id - Continuous Drain Current7.5 A
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Rds On - Drain-Source Resistance220 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time7.4 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time6.2 ns
Factory Pack Quantity2500
PackagingCut Tape
PackagingReel
Minimum Operating Temperature- 55 C
Package / CaseTO-252-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Qg - Gate Charge6.7 nC
ImageDiodes Incorporated DMN10H220LK3-13
BrandDiodes Incorporated
Product TypeMOSFET
TARIC8541290000
DescriptionMOSFET MOSFET BVDSS: 61V 100V TO252 T&R 2.5K
Product CategoryMOSFET
Channel ModeEnhancement
ManufacturerDiodes Incorporated
SubcategoryMOSFETs
Unit Weight3 oz
USHTS8541290095
Fall Time4.2 ns
Pd - Power Dissipation18.7 W
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time8.7 ns