参数项参数值
参数项参数值
DC Current Gain hFE Max600
Peak DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current0.1 A
ConfigurationSingle
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Width0.8 mm
Height0.75 mm
Length1.6 mm
DC Collector/Base Gain hfe Min100
Minimum Operating Temperature- 55 C
Package / CaseSOT-523-3
PackagingMouseReel
PackagingReel
PackagingCut Tape
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
RoHS Details
SubcategoryTransistors
ImageDiodes Incorporated DDTC115TE-7-F
Factory Pack Quantity3000
SeriesDDTC115
Product CategoryBipolar Transistors - Pre-Biased
Product TypeBJTs - Bipolar Transistors - Pre-Biased
DescriptionBipolar Transistors - Pre-Biased PRE-BIAS NPN 150mW
Unit Weight0.000071 oz
Pd - Power Dissipation150 mW
Typical Input Resistor100 kOhms
TypeNPN Small Signal Surface Mount Transistor