参数项参数值
参数项参数值
DC Current Gain hFE Max300 at 1 mA, 5 V
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO40 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max40 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Width1.2 mm
Height0.6 mm
MXHTS85412101
Length1.6 mm
CNHTS8541210000
KRHTS8541219000
DC Collector/Base Gain hfe Min300 at 1 mA, 5 V, 300 at 500 mA, 5 V, 200 at 1 A, 5 V, 75 at 2 A, 5 V
Minimum Operating Temperature- 55 C
JPHTS8541210101
CAHTS8541210000
Package / CaseSOT-563-6
PackagingCut Tape
PackagingMouseReel
PackagingReel
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541210000
RoHS Details
SubcategoryTransistors
ImageDiodes Incorporated DSS4140V-7
SeriesDSS41
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT LOW VCE(SAT) NPN SMT
USHTS8541210095
Unit Weight0.000106 oz
Pd - Power Dissipation600 mW