TK2P90E,RQ(S

TK2P90E,RQ(S

厂牌：TOSHIBA(东芝)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000049468141

描述：MOSFET N-CH 900V 2A TO-252

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商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2.5 V

TechnologySi

Id - Continuous Drain Current2 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 30 V, + 30 V

Typical Turn-On Delay Time50 ns

Rds On - Drain-Source Resistance5.9 Ohms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time70 ns

Width5.5 mm

Height2.3 mm

Length6.5 mm

MXHTS85412999

Qg - Gate Charge12 nC

Package / CaseDPAK-3

Mounting StyleSMD/SMT

Maximum Operating Temperature+ 150 C

JPHTS8541290100

CNHTS8541290000

Minimum Operating Temperature- 55 C

CAHTS8541290000

Channel ModeEnhancement

Fall Time22 ns

PackagingReel

PackagingCut Tape

PackagingMouseReel

TARIC8541290000

SeriesTK2P90E

BrandToshiba

Unit Weight0.012699 oz

RoHS Details

Factory Pack Quantity2000

ImageToshiba TK2P90E,RQS

Pd - Power Dissipation80 W

Product CategoryMOSFET

SubcategoryMOSFETs

Product TypeMOSFET

ManufacturerToshiba

USHTS8541290095

Vds - Drain-Source Breakdown Voltage900 V

TradenameMOSVIII

DescriptionMOSFET N-Ch TT-MOSVIII 900V 80W 500pF 2A

Number of Channels1 Channel

Rise Time25 ns