参数项参数值
参数项参数值
ConfigurationDual
Id - Continuous Drain Current900 mA
Transistor PolarityP-Channel
Vgs th - Gate-Source Threshold Voltage400 mV
TechnologySi
Rds On - Drain-Source Resistance260 mOhms
Transistor Type2 P-Channel
Typical Turn-Off Delay Time24.4 ns
Package / CaseSOT-363-6
Factory Pack Quantity10000
CAHTS8541210000
Vgs - Gate-Source Voltage- 8 V, + 8 V
KRHTS8541219000
Typical Turn-On Delay Time9.8 ns
Product TypeMOSFET
ManufacturerDiodes Incorporated
MXHTS85412101
Minimum Operating Temperature- 55 C
JPHTS8541210101
RoHS Details
BrandDiodes Incorporated
TARIC8541210000
Mounting StyleSMD/SMT
USHTS8541210095
Maximum Operating Temperature+ 150 C
ImageDiodes Incorporated DMP2200UDW-13
PackagingReel
PackagingCut Tape
PackagingMouseReel
SubcategoryMOSFETs
Product CategoryMOSFET
Qg - Gate Charge2.1 nC
DescriptionMOSFET Dual -20V P-Ch FET 260mOhm -4.5V -0.9A
SeriesDMP2200
Channel ModeEnhancement
Unit Weight0.000265 oz
Fall Time45 ns
CNHTS8541210000
Pd - Power Dissipation600 mW
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels2 Channel
Rise Time88 ns