STP35N60DM2

厂牌：ST(意法半导体)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000049468273

描述：MOSFET N-CH 600V 28A TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.094ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:210W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150蚓; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015)

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商品参数

参数项参数值

ConfigurationSingle

TechnologySi

Vgs th - Gate-Source Threshold Voltage3 V

Transistor PolarityN-Channel

Id - Continuous Drain Current28 A

KRHTS8541299000

Vgs - Gate-Source Voltage- 25 V, + 25 V

Minimum Operating Temperature- 55 C

JPHTS8541290100

CAHTS8541290000

Typical Turn-On Delay Time21.2 ns

Rds On - Drain-Source Resistance110 mOhms

Maximum Operating Temperature+ 150 C

Typical Turn-Off Delay Time68 ns

ImageSTMicroelectronics STP35N60DM2

Package / CaseTO-220-3

PackagingTube

SubcategoryMOSFETs

Product CategoryMOSFET

Mounting StyleThrough Hole

DescriptionMOSFET PTD HIGH VOLTAGE

TARIC8541290000

Factory Pack Quantity1000

ManufacturerSTMicroelectronics

Product TypeMOSFET

Qg - Gate Charge54 nC

BrandSTMicroelectronics

RoHS Details

MXHTS85412999

SeriesSTP35N60DM2

USHTS8541290095

Channel ModeEnhancement

Fall Time10.7 ns

Unit Weight0.011640 oz

CNHTS8541290000

Pd - Power Dissipation210 W

TradenameMDmesh

Vds - Drain-Source Breakdown Voltage600 V

Number of Channels1 Channel

Rise Time17 ns