参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
KRHTS8541299000
Minimum Operating Temperature- 55 C
Transistor PolarityN-Channel
Id - Continuous Drain Current300 mA
JPHTS8541290100
Vgs - Gate-Source Voltage- 30 V, + 30 V
CAHTS8541290000
Length4.95 mm
ImageSTMicroelectronics STQ1NK80ZR-AP
Height4.95 mm
Typical Turn-On Delay Time8 ns
Product CategoryMOSFET
Rds On - Drain-Source Resistance16 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time22 ns
DescriptionMOSFET N Ch 800V 13 Ohm 1A
Package / CaseTO-92-3
Maximum Operating Temperature+ 150 C
PackagingAmmo Pack
Factory Pack Quantity2000
Width3.94 mm
Mounting StyleThrough Hole
RoHS Details
TARIC8541290000
BrandSTMicroelectronics
Qg - Gate Charge7.7 nC
ManufacturerSTMicroelectronics
MXHTS85412999
Product TypeMOSFET
SeriesSTQ1NK80ZR-AP
SubcategoryMOSFETs
USHTS8541290095
Channel ModeEnhancement
Fall Time55 ns
Unit Weight0.007760 oz
CNHTS8541290000
Pd - Power Dissipation3 W
Vds - Drain-Source Breakdown Voltage800 V
Number of Channels1 Channel
Rise Time30 ns