参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current31.2 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance110 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time68 ns
Width4.4 mm
Height15.65 mm
MXHTS85412999
Length10 mm
CNHTS8541210000
KRHTS8541299000
Qg - Gate Charge118 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
Fall Time6 ns
TARIC8541290000
PackagingTube
BrandInfineon Technologies
RoHS Details
Product CategoryMOSFET
ImageInfineon Technologies IPP65R110CFD
SeriesCoolMOS CFD2
Unit Weight0.211644 oz
SubcategoryMOSFETs
Factory Pack Quantity500
ManufacturerInfineon
Product TypeMOSFET
Pd - Power Dissipation277.8 W
Part # AliasesIPP65R11CFDXK SP000895226 IPP65R110CFDXKSA1
USHTS8541290095
Vds - Drain-Source Breakdown Voltage650 V
TradenameCoolMOS
Number of Channels1 Channel
Rise Time11 ns