IPB70N10S3L-12

IPB70N10S3L-12

厂牌：Infineon(英飞凌)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000049477130

描述：MOSFET N-CH 100V 70A TO263-3

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1.7 V

TechnologySi

Id - Continuous Drain Current70 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

QualificationAEC-Q101

Typical Turn-On Delay Time10 ns

Rds On - Drain-Source Resistance12 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time28 ns

Width9.25 mm

MXHTS85412999

Height4.4 mm

Length10 mm

KRHTS8541299000

CNHTS8541290000

Qg - Gate Charge60 nC

Package / CaseTO-263-3

Mounting StyleSMD/SMT

JPHTS8541290100

Maximum Operating Temperature+ 175 C

Minimum Operating Temperature- 55 C

CAHTS8541290000

Channel ModeEnhancement

Fall Time5 ns

TARIC8541290000

PackagingMouseReel

PackagingReel

PackagingCut Tape

BrandInfineon Technologies

SeriesOptiMOS-T

RoHS Details

ImageInfineon Technologies IPB70N10S3L-12

Product CategoryMOSFET

Unit Weight0.139332 oz

ManufacturerInfineon

SubcategoryMOSFETs

Factory Pack Quantity1000

Product TypeMOSFET

Pd - Power Dissipation125 W

Part # AliasesSP000379631 IPB7N1S3L12XT IPB70N10S3L12ATMA1

USHTS8541290095

DescriptionMOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T

Vds - Drain-Source Breakdown Voltage100 V

TradenameOptiMOS

Number of Channels1 Channel

Rise Time5 ns