STD7N65M2

STD7N65M2

厂牌：ST(意法半导体)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000049489110

描述：Transistors MOSFETs N-CH 650V 5A 3-Pin(2+Tab) DPAK T/R

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage3 V

TechnologySi

Transistor PolarityN-Channel

Id - Continuous Drain Current5 A

KRHTS8541299000

Vgs - Gate-Source Voltage- 25 V, + 25 V

JPHTS8541290100

CAHTS8541290000

ProductPower MOSFETs

Minimum Operating Temperature- 55 C

Product CategoryMOSFET

Typical Turn-On Delay Time8 ns

ImageSTMicroelectronics STD7N65M2

Rds On - Drain-Source Resistance1.15 Ohms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time30 ns

Maximum Operating Temperature+ 150 C

Package / CaseTO-252-3

DescriptionMOSFET PTD HIGH VOLTAGE

PackagingReel

PackagingCut Tape

PackagingMouseReel

Mounting StyleSMD/SMT

TARIC8541290000

BrandSTMicroelectronics

Qg - Gate Charge9 nC

Factory Pack Quantity2500

Product TypeMOSFET

MXHTS85412999

ManufacturerSTMicroelectronics

SubcategoryMOSFETs

RoHS Details

SeriesSTD7N65M2

USHTS8541290095

Channel ModeEnhancement

Fall Time20 ns

Unit Weight0.139332 oz

CNHTS8541290000

Pd - Power Dissipation60 W

TradenameMDmesh

Vds - Drain-Source Breakdown Voltage650 V

Number of Channels1 Channel

Rise Time20 ns