参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current29 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 25 V, + 25 V
PackagingCut Tape
PackagingReel
PackagingMouseReel
KRHTS8541299000
Minimum Operating Temperature- 55 C
JPHTS8541290100
ManufacturerSTMicroelectronics
Factory Pack Quantity1000
CAHTS8541290000
Rds On - Drain-Source Resistance110 mOhms
Transistor Type1 N-Channel
Package / CaseTO-263-3
BrandSTMicroelectronics
TARIC8541210000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
RoHS Details
ImageSTMicroelectronics STB34NM60ND
Qg - Gate Charge84 nC
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET N-Ch Power Mosfet 600V 0.097 Ohm 29A
MXHTS85412999
Product TypeMOSFET
SeriesSTB34NM60ND
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.139332 oz
CNHTS8541210000
Pd - Power Dissipation250 W
Vds - Drain-Source Breakdown Voltage650 V
Number of Channels1 Channel