参数项参数值
参数项参数值
Gain Bandwidth Product fT75 MHz
Height1.57 mm
Length6.5 mm
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max60 V
Continuous Collector Current2 A
ConfigurationSingle
Transistor PolarityNPN
TechnologySi
Emitter- Base Voltage VEBO5 V
Package / CaseSOT-223-4
CAHTS8541210000
KRHTS8541219000
Factory Pack Quantity1000
Collector-Emitter Saturation Voltage0.5 V
DC Collector/Base Gain hfe Min75
BrandON Semiconductor
DescriptionBipolar Transistors - BJT 2A 80V NPN
Product TypeBJTs - Bipolar Transistors
ManufacturerON Semiconductor
MXHTS85412101
Minimum Operating Temperature- 65 C
JPHTS8541210101
RoHS Details
TARIC8541210000
Mounting StyleSMD/SMT
USHTS8541210095
Maximum Operating Temperature+ 150 C
Width3.5 mm
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageON Semiconductor PZT651T1G
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
SeriesPZT651
Unit Weight0.003951 oz
CNHTS8541210000
Pd - Power Dissipation800 mW