参数项参数值
参数项参数值
DC Current Gain hFE Max1200 at 1 mA, 5 V
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current0.15 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO12 V
Collector-Emitter Saturation Voltage300 mV
DC Collector/Base Gain hfe Min1200
Width1.6 mm
Height1.1 mm
Length2.9 mm
MXHTS85412999
KRHTS8541299000
Package / CaseSC-59-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingMouseReel
PackagingReel
PackagingCut Tape
ImageROHM Semiconductor 2SD2226KT146W
TARIC8541290000
RoHS Details
Series2SD2226K
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation200 mW
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
DescriptionBipolar Transistors - BJT NPN 50V 150MA
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)