参数项参数值
参数项参数值
Gain Bandwidth Product fT180 MHz, 260 MHz
Collector- Base Voltage VCBO15 V, 60 V
Maximum DC Collector Current0.15 A
Collector- Emitter Voltage VCEO Max12 V, 50 V
ConfigurationDual
TechnologySi
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO7 V
DC Collector/Base Gain hfe Min120
Width1.2 mm
Height0.5 mm
Length1.6 mm
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandROHM Semiconductor
RoHS Details
SeriesEMZ8
Factory Pack Quantity8000
ImageROHM Semiconductor EMZ8T2R
Pd - Power Dissipation150 mW
Product CategoryBipolar Transistors - BJT
ManufacturerROHM Semiconductor
Part # AliasesEMZ8
SubcategoryTransistors
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT DUAL PNP/NPN