BSM120D12P2C005

BSM120D12P2C005

厂牌：ROHM

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000049526378

描述：SiC（碳化硅）功率模块

商品参数

参数项参数值

参数项参数值

Channel TypeN

Maximum Continuous Drain Current120 A

Maximum Drain Source Voltage1200 V

Package TypeC

Mounting TypeSurface Mount

Pin Count4

Channel ModeEnhancement

Maximum Gate Threshold Voltage4V

Minimum Gate Threshold Voltage1.6V

Maximum Power Dissipation935 W

Length122mm

Maximum Operating Temperature+150 °C

Number of Elements per Chip2

Transistor MaterialSiC

WidthWidth