参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage300 mV
TechnologySi
Id - Continuous Drain Current200 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time4 ns, 4 ns
Rds On - Drain-Source Resistance1.6 Ohms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time15 ns, 15 ns
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-563-6
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
Fall Time55 ns, 55 ns
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.000106 oz
ImageROHM Semiconductor EM6K33T2R
TARIC8541290000
Pd - Power Dissipation150 mW
RoHS Details
Part # AliasesEM6K33
Factory Pack Quantity8000
SeriesEM6K33
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
Product CategoryMOSFET
Vds - Drain-Source Breakdown Voltage50 V
Product TypeMOSFET
Number of Channels2 Channel
DescriptionMOSFET Trans MOSFET N-CH
SubcategoryMOSFETs
Rise Time6 ns, 6 ns
USHTS8541290095