参数项参数值
参数项参数值
Forward Transconductance - Min10 S, 18 S
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1.3 V
TechnologySi
Id - Continuous Drain Current27 A, 57 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time9.6 ns, 13.2 ns
Rds On - Drain-Source Resistance6.7 mOhms, 3.6 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time25.5 ns, 34.7 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge10 nC, 16.8 nC
CNHTS8541290000
Package / CaseHSOP-8
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
Fall Time3.4 ns, 8.4 ns
TARIC8541290000
RoHS Details
BrandROHM Semiconductor
ImageROHM Semiconductor HP8K22TB
Product TypeMOSFET
Product CategoryMOSFET
Factory Pack Quantity2500
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Pd - Power Dissipation3 W
Part # AliasesHP8K22
DescriptionMOSFET 30V Nch+Nch Si MOSFET
USHTS8541290095
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time4.5 ns, 7.2 ns
Moisture Sensitivity Level1 (Unlimited)