参数项参数值
参数项参数值
DC Current Gain hFE Max600
Peak DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current100 mA
ConfigurationDual
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Width1.6 mm
Height1.1 mm
DC Collector/Base Gain hfe Min100
Length2.9 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
RoHS Details
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryTransistors
ImageROHM Semiconductor IMH4AT110
BrandROHM Semiconductor
Product TypeBJTs - Bipolar Transistors - Pre-Biased
ManufacturerROHM Semiconductor
USHTS8541290095
Unit Weight0.001235 oz
Factory Pack Quantity3000
Product CategoryBipolar Transistors - Pre-Biased
DescriptionBipolar Transistors - Pre-Biased DUAL NPN 50V 100MA SOT-457
Pd - Power Dissipation300 mW
Typical Input Resistor10 kOhms