参数项参数值
参数项参数值
DC Current Gain hFE Max560
Gain Bandwidth Product fT400 MHz, 350 MHz
Collector- Base Voltage VCBO20 V
Maximum DC Collector Current200 mA, - 200 mA
Collector- Emitter Voltage VCEO Max20 V
Continuous Collector Current200 mA
ConfigurationDual
TechnologySi
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage120 mV
DC Collector/Base Gain hfe Min120
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-563-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
CAHTS8541290000
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Unit Weight0.000106 oz
BrandROHM Semiconductor
Pd - Power Dissipation150 mW
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
Part # AliasesEMZ51
Factory Pack Quantity8000
Product TypeBJTs - Bipolar Transistors
USHTS8541290095
DescriptionBipolar Transistors - BJT PNP+NPN Driver Transistor