参数项参数值
参数项参数值
DC Current Gain hFE Max270 at 10 mA, 2 V
Gain Bandwidth Product fT260 MHz
Collector- Base Voltage VCBO15 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max12 V
ConfigurationDual
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO6 V
Width1.6 mm
Height1.1 mm
Length2.9 mm
DC Collector/Base Gain hfe Min270 at 10 mA, 2 V
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Factory Pack Quantity3000
BrandROHM Semiconductor
DescriptionBipolar Transistors - BJT TRANS GP BJT PNP 12V 0.5A 6PIN
ImageROHM Semiconductor IMT18T110
Product TypeBJTs - Bipolar Transistors
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
RoHS Details
SubcategoryTransistors
Part # AliasesIMT18
Pd - Power Dissipation300 mW