参数项参数值
参数项参数值
Peak DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max- 50 V
Continuous Collector Current- 100 mA
ConfigurationDual
Transistor PolarityPNP
DC Collector/Base Gain hfe Min20
Width1.2 mm
Height0.5 mm
Length1.6 mm
MXHTS85412999
KRHTS8541299000
Package / CaseEMT-6
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
SeriesEMB11
ImageROHM Semiconductor EMB11T2R
BrandROHM Semiconductor
Pd - Power Dissipation150 mW
ManufacturerROHM Semiconductor
Factory Pack Quantity8000
Part # AliasesEMB11
Product TypeBJTs - Bipolar Transistors - Pre-Biased
Product CategoryBipolar Transistors - Pre-Biased
SubcategoryTransistors
Typical Input Resistor10 kOhms
DescriptionBipolar Transistors - Pre-Biased DUAL PNP 50V 50MA
USHTS8541290095