参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1.2 V
TechnologySi
Id - Continuous Drain Current11 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time8.2 ns, 8.4 ns
Rds On - Drain-Source Resistance11.8 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time19.2 ns, 19.7 ns
Qg - Gate Charge6 nC, 7.4 nC
Package / CaseHSML3030L-10
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Fall Time2.9 ns, 3.2 ns
PackagingCut Tape
PackagingReel
TARIC8541290000
RoHS Details
BrandROHM Semiconductor
ImageROHM Semiconductor HS8K1TB
Unit Weight0.001784 oz
SubcategoryMOSFETs
Product CategoryMOSFET
Factory Pack Quantity3000
Product TypeMOSFET
ManufacturerROHM Semiconductor
Pd - Power Dissipation2 W
Part # AliasesHS8K1
DescriptionMOSFET 30V N-CHANNEL DUAL
USHTS8541290095
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time4.5 ns, 5.2 ns
Moisture Sensitivity Level1 (Unlimited)