参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current7 A, 11 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V, - 12 V, + 12 V
Typical Turn-On Delay Time9.4 ns, 13.6 ns
Rds On - Drain-Source Resistance12.8 mOhms, 10.2 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time26.8 ns, 47.3 ns
MXHTS85412999
KRHTS8541299000
JPHTS8541290100
Qg - Gate Charge11.1 nC, 20.2 nC
CAHTS8541290000
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseHSML3030L-10
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
ImageROHM Semiconductor HS8K11TB
RoHS Details
Channel ModeEnhancement
Fall Time5.1 ns, 7.5 ns
SubcategoryMOSFETs
Factory Pack Quantity3000
Product CategoryMOSFET
BrandROHM Semiconductor
Product TypeMOSFET
DescriptionMOSFET 30V Nch+Nch Power MOSFET
ManufacturerROHM Semiconductor
USHTS8541290095
Pd - Power Dissipation2 W
Part # AliasesHS8K11
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel