参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current76 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time65 ns
Transistor Type1 N-Channel
Typical Turn-Off Delay Time450 ns
Qg - Gate Charge260 nC
Package / CaseTO-247-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time170 ns
PackagingTube
TARIC8541290000
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor R6076ENZ4C13
Product CategoryMOSFET
Unit Weight0.258417 oz
SubcategoryMOSFETs
Factory Pack Quantity30
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation735 W
USHTS8541290095
DescriptionMOSFET 600V N-CH 76A POWER MOSFET
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time170 ns
Moisture Sensitivity Level1 (Unlimited)