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商品参数
参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current1 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time9 ns
Width1.6 mm
Rds On - Drain-Source Resistance600 mOhms
Transistor Type1 P-Channel
Height1.1 mm
Typical Turn-Off Delay Time18 ns
Length2.9 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge1.7 nC
Package / CaseSOT-457-6
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
ProductMOSFET Small Signal
RoHS Details
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor QS6U24TR
SubcategoryMOSFETs
Channel ModeEnhancement
BrandROHM Semiconductor
Fall Time7 ns
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
Product TypeMOSFET
SeriesQS6U24
Unit Weight0.000494 oz
USHTS8541290095
Product CategoryMOSFET
DescriptionMOSFET P-CH 30V 1A TSMT6
Part # AliasesQS6U24
Pd - Power Dissipation900 mW
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time7 ns
TypeMOSFET