参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time30 ns
Rds On - Drain-Source Resistance196 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time55 ns
Qg - Gate Charge40 nC
Package / CaseTO-247-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time10 ns
TARIC8541290000
PackagingTube
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor R6020KNZ4C13
Unit Weight0.434903 oz
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity30
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation231 W
USHTS8541290095
DescriptionMOSFET 600V N-CH 20A POWER MOSFET
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time30 ns