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商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.2 V
TechnologySi
Id - Continuous Drain Current80 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time21.8 ns
Rds On - Drain-Source Resistance2.1 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time74.6 ns
Qg - Gate Charge42.8 nC
Package / CaseHSOP-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time28.5 ns
TARIC8541290000
PackagingReel
PackagingCut Tape
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RS1E321GNTB1
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity2500
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation34 W
USHTS8541290095
DescriptionMOSFET 30V N-CHANNEL 80A
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time15.6 ns