RF4E110BNTR

RF4E110BNTR

厂牌：ROHM

包装：REEL 3000

类目：元器件 > 分立器件 > MOSFET

编号：B000049533592

描述：4.5V驱动 N沟道MOSFET

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min6 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2 V

TechnologySi

Id - Continuous Drain Current11 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time14 ns

Rds On - Drain-Source Resistance11.1 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time43 ns

MXHTS85412999

KRHTS8541299000

JPHTS8541290100

Qg - Gate Charge24 nC

CAHTS8541290000

Minimum Operating Temperature- 55 C

Mounting StyleSMD/SMT

Package / CaseDFN-2020-8

Maximum Operating Temperature+ 150 C

CNHTS8541290000

PackagingCut Tape

PackagingMouseReel

PackagingReel

ImageROHM Semiconductor RF4E110BNTR

TARIC8541290000

RoHS Details

Channel ModeEnhancement

SeriesRF4E110BN

Fall Time11 ns

SubcategoryMOSFETs

Factory Pack Quantity3000

Product CategoryMOSFET

BrandROHM Semiconductor

Product TypeMOSFET

DescriptionMOSFET 4.5V Drive Nch MOSFET

ManufacturerROHM Semiconductor

USHTS8541290095

Pd - Power Dissipation2 W

Part # AliasesRF4E110BN

Vds - Drain-Source Breakdown Voltage30 V

Number of Channels1 Channel

Rise Time12 ns