参数项参数值
参数项参数值
Forward Transconductance - Min1 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current1.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time6 ns
Rds On - Drain-Source Resistance290 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time15 ns
Qg - Gate Charge2 nC
Package / CaseSC-95-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time10 ns
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RSQ015N06HZGTR
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
Product TypeMOSFET
Pd - Power Dissipation1.25 W
USHTS8541290095
DescriptionMOSFET 60V N-CHANNEL 1.5A
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time9 ns