参数项参数值
参数项参数值
ConfigurationDual
TechnologySi
Id - Continuous Drain Current1.5 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time10 ns
Width1.6 mm
Height0.85 mm
Rds On - Drain-Source Resistance310 mOhms
Transistor Type2 P-Channel
Typical Turn-Off Delay Time45 ns
MXHTS85412999
Length2.9 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
Package / CaseSOT-457T-6
ProductMOSFET Small Signal
CNHTS8541290000
ImageROHM Semiconductor QS6J1TR
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Channel ModeEnhancement
Factory Pack Quantity3000
Fall Time12 ns
SeriesQS6J1
SubcategoryMOSFETs
Product CategoryMOSFET
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
DescriptionMOSFET 2P-CH 20V 1.5A TSMT6
Product TypeMOSFET
USHTS8541290095
Part # AliasesQS6J1
Pd - Power Dissipation1.25 W
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels2 Channel
Rise Time12 ns
TypeMOSFET