R6047KNZ4C13

厂牌:ROHM
包装:TUBE 600
类目:元器件 > 分立器件 > MOSFET
编号:B000049533851
描述:MOSFET N-CH 600V 47A 150DEG C 481W; Transistor Polarity:N Channel; Continuous Drain Current Id:47A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.066ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:481W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150蚓; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
最新价格近期成交3单+
数量价格(含税)
1¥96.0256
100¥66.1119
500¥59.8903
600¥49.8981
1200¥46.1275
3000¥39.9059
6000¥37.3922
库存:600交期:1-2 Weeks起订:30增量:1
数量:
X
96.0256(单价)
合计:
¥2880.77
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time30 ns
Rds On - Drain-Source Resistance205 mOhms
Transistor Type1 N-Channel
CNHTS8541290000
Qg - Gate Charge40 nC
Package / CaseTO-247-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time30 ns
PackagingTube
TARIC8541290000
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor R6047KNZ4C13
Product CategoryMOSFET
Factory Pack Quantity30
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation231 W
USHTS8541290095
Vds - Drain-Source Breakdown Voltage650 V
Number of Channels1 Channel
Rise Time50 ns