参数项参数值
参数项参数值
Forward Transconductance - Min1.5 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.5 V
TechnologySi
Id - Continuous Drain Current2 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
QualificationAEC-Q101
Typical Turn-On Delay Time11 ns
Rds On - Drain-Source Resistance180 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time21 ns
CNHTS8541290000
Qg - Gate Charge2.9 nC
Package / CaseSC-96-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time11 ns
TARIC8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RTR020N05HZGTL
Unit Weight0.002018 oz
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation1 W
USHTS8541290095
DescriptionMOSFET 45V N-CHANNEL 2A
Vds - Drain-Source Breakdown Voltage45 V
Number of Channels1 Channel
Rise Time16 ns