参数项参数值
参数项参数值
Forward Transconductance - Min9.5 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current13.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time10 ns
Rds On - Drain-Source Resistance5.7 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time69 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge33 nC
Mounting StyleSMD/SMT
Package / CaseSOP-8
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Factory Pack Quantity2500
CNHTS8541290000
BrandROHM Semiconductor
Channel ModeEnhancement
Product CategoryMOSFET
TARIC8541290000
ManufacturerROHM Semiconductor
DescriptionMOSFET Nch 30V 13.5A Si MOSFET
ImageROHM Semiconductor RS3E135BNGZETB
Fall Time30 ns
Product TypeMOSFET
RoHS Details
SubcategoryMOSFETs
Part # AliasesRS3E135BN
USHTS8541290095
Pd - Power Dissipation2 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time17 ns