参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage- 1 V
TechnologySi
Id - Continuous Drain Current2.5 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time8 ns
Rds On - Drain-Source Resistance110 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time33 ns
Qg - Gate Charge4.4 nC
Package / CaseSOT-457T-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time7 ns
PackagingReel
PackagingCut Tape
TARIC8541290000
RoHS Details
BrandROHM Semiconductor
ImageROHM Semiconductor RSQ025P03HZGTR
SubcategoryMOSFETs
Product CategoryMOSFET
Factory Pack Quantity3000
Product TypeMOSFET
ManufacturerROHM Semiconductor
Pd - Power Dissipation1.25 W
DescriptionMOSFET -30V P-CHANNEL -2.5A
USHTS8541290095
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time11 ns