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商品参数
参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current2 A
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time8 ns
Width1.6 mm
Rds On - Drain-Source Resistance100 MOhms
Transistor Type1 N-Channel
Height0.85 mm
Typical Turn-Off Delay Time21 ns
Length2.9 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge3.9 nC
Package / CaseTSMT-5
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
ProductMOSFET Small Signal
RoHS Details
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor QS5U17TR
SubcategoryMOSFETs
Channel ModeEnhancement
BrandROHM Semiconductor
Fall Time10 ns
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
Product TypeMOSFET
SeriesQS5U17
Unit Weight0.000494 oz
USHTS8541290095
Product CategoryMOSFET
DescriptionMOSFET N-CH 30V 2A
Part # AliasesQS5U17
Pd - Power Dissipation1.25 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time10 ns