RS1E240GNTB

厂牌：ROHM

包装：REEL 2500

类目：元器件 > 分立器件 > MOSFET

编号：B000049534355

描述：MOSFET N-CH 30V 72A 150DEG C 27W; Transistor Polarity:N Channel; Continuous Drain Current Id:72A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:27W; Transistor Case Style:HSOP; No. of Pins:8Pins; Operating Temperature Max:150蚓; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

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商品参数

参数项参数值

Forward Transconductance - Min21.5 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2.5 V

TechnologySi

Id - Continuous Drain Current24 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time16.3 ns

Rds On - Drain-Source Resistance3.3 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time47 ns

MXHTS85412999

Qg - Gate Charge23 nC

KRHTS8541299000

Package / CaseHSOP-8

Mounting StyleSMD/SMT

JPHTS8541290100

Maximum Operating Temperature+ 150 C

CAHTS8541290000

Minimum Operating Temperature- 55 C

CNHTS8541290000

Channel ModeEnhancement

Fall Time11.5 ns

PackagingCut Tape

PackagingMouseReel

PackagingReel

TARIC8541290000

RoHS Details

Unit Weight0.002490 oz

ImageROHM Semiconductor RS1E240GNTB

BrandROHM Semiconductor

Pd - Power Dissipation3 W

Factory Pack Quantity2500

ManufacturerROHM Semiconductor

Part # AliasesRS1E240GN

Product TypeMOSFET

Product CategoryMOSFET

SubcategoryMOSFETs

DescriptionMOSFET 4.5V Drive Nch MOSFET

Vds - Drain-Source Breakdown Voltage30 V

USHTS8541290095

Number of Channels1 Channel

Rise Time7.8 ns