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商品参数
参数项参数值
参数项参数值
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature175°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C56A (Tc)
Rds On (Max) @ Id, Vgs34mOhm @ 29A, 18V
FET Feature-
Power Dissipation (Max)176W
Vgs(th) (Max) @ Id4.8V @ 15.4mA
Supplier Device PackageTO-247N
Grade-
Drive Voltage (Max Rds On, Min Rds On)18V
Vgs (Max)+21V, -4V
Drain to Source Voltage (Vdss)750 V
Gate Charge (Qg) (Max) @ Vgs94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds2320 pF @ 500 V
Qualification-
Moisture Sensitivity Level1 (Unlimited)