参数项参数值
参数项参数值
Forward Transconductance - Min10 s
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage- 3 V
TechnologySi
Id - Continuous Drain Current14 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time20 ns
Rds On - Drain-Source Resistance84 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time240 ns
Qg - Gate Charge27 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time110 ns
PackagingMouseReel
PackagingCut Tape
PackagingReel
SeriesRD3L
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RD3L140SPFRATL
Product CategoryMOSFET
Factory Pack Quantity2500
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation20 W
DescriptionMOSFET Pch -60V Vdss -14A TO-252(DPAK); TO-252
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time45 ns
Moisture Sensitivity Level1 (Unlimited)