参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage500 mV
TechnologySi
Id - Continuous Drain Current5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time8.8 ns
Rds On - Drain-Source Resistance35 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time26 ns
Qg - Gate Charge4.7 nC
Package / CaseSOT-457-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time5.7 ns
TARIC8541290000
PackagingReel
PackagingCut Tape
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RQ6E050AJTCR
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
Product TypeMOSFET
Pd - Power Dissipation1.25 W
Part # AliasesRQ6E050AJ
USHTS8541290095
DescriptionMOSFET 30V N-CHANNEL 5A
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time5.9 ns