RQ6E045BNTCR

厂牌：ROHM

包装：REEL 3000

类目：元器件 > 分立器件 > MOSFET

编号：B000049534702

描述：MOSFET N-CH 30V 4.5A TSMT-6; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:1.25W; Transistor Case Style:TSMT; No. of Pins:6Pins; Operating Temperature Max:150蚓; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

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商品参数

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1 V

TechnologySi

Id - Continuous Drain Current4.5 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time6 ns

Rds On - Drain-Source Resistance21 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time12 ns

MXHTS85412999

KRHTS8541299000

Qg - Gate Charge8.4 nC

JPHTS8541290100

CAHTS8541290000

Package / CaseSOT-457-6

Minimum Operating Temperature- 55 C

Mounting StyleSMD/SMT

Maximum Operating Temperature+ 150 C

CNHTS8541290000

TARIC8541290000

PackagingCut Tape

PackagingMouseReel

PackagingReel

RoHS Details

ImageROHM Semiconductor RQ6E045BNTCR

Channel ModeEnhancement

SubcategoryMOSFETs

Fall Time6 ns

BrandROHM Semiconductor

Factory Pack Quantity3000

Unit Weight0.003384 oz

Product TypeMOSFET

Product CategoryMOSFET

DescriptionMOSFET Nch 30V 4.5A Power MOSFET

ManufacturerROHM Semiconductor

USHTS8541290095

Pd - Power Dissipation1.25 W

Part # AliasesRQ6E045BN

Vds - Drain-Source Breakdown Voltage30 V

Number of Channels1 Channel

Rise Time11 ns