参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current4.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time5 ns
Rds On - Drain-Source Resistance80 mOhms
Transistor Type2 P-Channel
Typical Turn-Off Delay Time10 ns
Qg - Gate Charge3 nC
Package / CaseSOP-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time3.5 ns
TARIC8541290000
PackagingReel
PackagingCut Tape
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RQ6A045APTCR
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
Product TypeMOSFET
Pd - Power Dissipation2.7 W
USHTS8541290095
DescriptionMOSFET -12V P-CHANNEL -4.5A
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time7.5 ns