QS8J13TR

厂牌：ROHM

包装：REEL 3000

类目：元器件 > 分立器件 > MOSFET

编号：B000049534833

描述：MOSFET DUAL P-CH -12V -5.5A TSMT-8; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-5.5A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:1.5W; Transistor Case Style:TSMT; No. of Pins:8Pins; Operating Temperature Max:150蚓; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018)

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商品参数

参数项参数值

Forward Transconductance - Min8.5 S

ConfigurationDual

Vgs th - Gate-Source Threshold Voltage1 V

TechnologySi

Id - Continuous Drain Current5.5 A

Transistor PolarityP-Channel

Vgs - Gate-Source Voltage- 8 V, + 8 V

Typical Turn-On Delay Time13 ns

Rds On - Drain-Source Resistance15 mOhms

Transistor Type2 P-Channel

Typical Turn-Off Delay Time400 ns

MXHTS85412999

KRHTS8541299000

JPHTS8541290100

Qg - Gate Charge60 nC

CAHTS8541290000

Mounting StyleSMD/SMT

Package / CaseTSMT-8

Maximum Operating Temperature+ 150 C

CNHTS8541290000

PackagingCut Tape

PackagingMouseReel

PackagingReel

ImageROHM Semiconductor QS8J13TR

TARIC8541290000

RoHS Details

Channel ModeEnhancement

SeriesQS8J13

Fall Time200 ns

SubcategoryMOSFETs

Factory Pack Quantity3000

Product CategoryMOSFET

BrandROHM Semiconductor

Product TypeMOSFET

Unit Weight0.196723 oz

DescriptionMOSFET 1.5V Drive Pch+Pch MOSFET

ManufacturerROHM Semiconductor

USHTS8541290095

Pd - Power Dissipation1.5 W

Part # AliasesQS8J13

Vds - Drain-Source Breakdown Voltage12 V

Number of Channels2 Channel

Rise Time100 ns