参数项参数值
参数项参数值
Forward Transconductance - Min5.5 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.2 V
TechnologySi
Id - Continuous Drain Current5 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time11 ns
Rds On - Drain-Source Resistance27 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time70 ns
MXHTS85412999
KRHTS8541299000
CNHTS8541290000
Qg - Gate Charge10.4 nC
Package / CaseSOT-457-6
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time65 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
BrandROHM Semiconductor
ImageROHM Semiconductor RQ6C050BCTCR
Unit Weight0.008861 oz
SubcategoryMOSFETs
Product CategoryMOSFET
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation1.25 W
Part # AliasesRQ6C050BC
USHTS8541290095
DescriptionMOSFET Pch -20V -5A Si MOSFET
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time32 ns