参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage300 mV
TechnologySi
Id - Continuous Drain Current3.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 10 V, + 10 V
QualificationAEC-Q101
Typical Turn-On Delay Time10 ns
Rds On - Drain-Source Resistance31 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time40 ns
MXHTS85411001
CNHTS8541290000
Qg - Gate Charge5.7 nC
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
JPHTS8541100901
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541100090
Channel ModeEnhancement
Fall Time50 ns
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RUL035N02FRATR
Product CategoryMOSFET
Unit Weight0.001846 oz
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
Product TypeMOSFET
Pd - Power Dissipation1 W
Part # AliasesRUL035N02FRA
USHTS8541100080
DescriptionMOSFET Nch 20V Vds 3.5A 0.066Rds(on) 5.7Qg
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time20 ns