参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current8 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance11 mOhms
Transistor Type1 N-Channel
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge14.5 nC
Package / CaseHSMT-8
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
ImageROHM Semiconductor RQ3E080BNTB
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time7 ns
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
Product CategoryMOSFET
Product TypeMOSFET
USHTS8541290095
DescriptionMOSFET 4.5V Drive Nch MOSFET
Pd - Power Dissipation2 W
Part # AliasesRQ3E080BN
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time20 ns