参数项参数值
参数项参数值
Forward Transconductance - Min3 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage- 3 V
TechnologySi
Id - Continuous Drain Current4.5 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time8 ns
Rds On - Drain-Source Resistance155 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time35 ns
CNHTS8541210000
Qg - Gate Charge12 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time8 ns
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541290000
SeriesRD3H
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RD3H045SPFRATL
Product CategoryMOSFET
Factory Pack Quantity2500
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation15 W
USHTS8541290095
DescriptionMOSFET Pch -45V Vdss -4.5A TO-252(DPAK); TO-252
Vds - Drain-Source Breakdown Voltage45 V
Number of Channels1 Channel
Rise Time8 ns