RQ7E055ATTCR

厂牌：ROHM

包装：REEL 3000

类目：元器件 > 分立器件 > MOSFET

编号：B000049535237

描述：MOSFET P-CH -30V -5.5A TSMT-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.5A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0193ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power Dissipation Pd:1.5W; Transistor Case Style:TSMT; No. of Pins:8Pins; Operating Temperature Max:150蚓; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

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商品参数

参数项参数值

Forward Transconductance - Min5.2 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2.5 V

TechnologySi

Id - Continuous Drain Current5.5 A

Transistor PolarityP-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time9.5 ns

Rds On - Drain-Source Resistance19.3 mOhms

Transistor Type1 P-Channel

Typical Turn-Off Delay Time52 ns

MXHTS85412999

KRHTS8541299000

CNHTS8541290000

Qg - Gate Charge18.8 nC

Package / CaseTSMT-8

Mounting StyleSMD/SMT

JPHTS8541290100

Maximum Operating Temperature+ 150 C

CAHTS8541290000

Minimum Operating Temperature- 55 C

Channel ModeEnhancement

Fall Time21 ns

PackagingCut Tape

PackagingMouseReel

PackagingReel

TARIC8541290000

RoHS Details

BrandROHM Semiconductor

ImageROHM Semiconductor RQ7E055ATTCR

SubcategoryMOSFETs

Product CategoryMOSFET

Factory Pack Quantity3000

ManufacturerROHM Semiconductor

Product TypeMOSFET

Pd - Power Dissipation1.5 W

Part # AliasesRQ7E055AT

USHTS8541290095

DescriptionMOSFET Pch -30V -5.5A Si MOSFET

Vds - Drain-Source Breakdown Voltage30 V

Number of Channels1 Channel

Rise Time13 ns

Moisture Sensitivity Level1 (Unlimited)