参数项参数值
参数项参数值
Forward Transconductance - Min6 S
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current10 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time15 ns
Rds On - Drain-Source Resistance182 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time140 ns
Qg - Gate Charge52 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
PackagingCut Tape
PackagingReel
TARIC8541290000
RoHS Details
SeriesRD3
BrandROHM Semiconductor
ImageROHM Semiconductor RD3S100AAFRATL
Product TypeMOSFET
Factory Pack Quantity2500
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Pd - Power Dissipation85 W
DescriptionMOSFET 190V N-CH 10A POWER MOSFET
USHTS8541290095
Vds - Drain-Source Breakdown Voltage190 V
Number of Channels1 Channel
Rise Time20 ns