参数项参数值
参数项参数值
Forward Transconductance - Min4 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.5 V
TechnologySi
Id - Continuous Drain Current4 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
QualificationAEC-Q101
Typical Turn-On Delay Time10 ns
Rds On - Drain-Source Resistance48 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time37 ns
Qg - Gate Charge5.9 nC
Package / CaseSC-96-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time19 ns
PackagingReel
PackagingMouseReel
PackagingCut Tape
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RTR040N03HZGTL
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation1 W
DescriptionMOSFET 30V N-CHANNEL 4A
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time18 ns
Moisture Sensitivity Level1 (Unlimited)